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Our Work / Radiation Detector / PIPS Detector

PIPS Detector

PIPS-Passivated Implanted Planar Silicon detector is a product of modern semiconductor technology. It used ion implantation device to accelerate ions, after screening, focusing and re-acceleration, they are injected into silicon wafers. The whole process is carried out under vacuum. The production of deep ion-implanted silicon detetcors for alpha/beta spectrometers have undergone thousands ofapplictaion so far, including alpha and beta energy spectrum analysis and counting, nuclear identification, environment radiation monitoring and many other relevant fields.

Model
EP-300FD
EP-450FD
EP-600FD
EP-900FD
EP-1200FD
EP-2000FD
Effectiva area(mm2)
314
475
600
940
1240
2000
Effective diameter(mm)
20
24.6
27.6
34.6
39.8
50.5
Thickness(μm)
300/500
300/500
300/500
300/500
300/500
300/500
Energy resolution(keV)
18
20
25
25
35
40
Leakage current (20℃, typ/max)
15/40 nA
20/40 nA
30/50 nA
40/70 nA
40/70 nA
70/100 nA
Bias voltage (V, min/max)
20/90
20/90
20/90
20/90
20/90
20/90
Work temp. (℃, min/max)
-40/+40
-40/+40
-40/+40
-40/+40
-40/+40
-40/+40
Storage temp. (℃, max)
100
100
100
100
100
100
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