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Our Work / Radiation Detector / PIPS Detector
PIPS Detector
PIPS-Passivated Implanted Planar Silicon detector is a product of modern semiconductor technology. It used ion implantation device to accelerate ions, after screening, focusing and re-acceleration, they are injected into silicon wafers. The whole process is carried out under vacuum. The production of deep ion-implanted silicon detetcors for alpha/beta spectrometers have undergone thousands ofapplictaion so far, including alpha and beta energy spectrum analysis and counting, nuclear identification, environment radiation monitoring and many other relevant fields.
Model | EP-300FD | EP-450FD | EP-600FD | EP-900FD | EP-1200FD | EP-2000FD |
|---|---|---|---|---|---|---|
Effectiva area(mm2) | 314 | 475 | 600 | 940 | 1240 | 2000 |
Effective diameter(mm) | 20 | 24.6 | 27.6 | 34.6 | 39.8 | 50.5 |
Thickness(μm) | 300/500 | 300/500 | 300/500 | 300/500 | 300/500 | 300/500 |
Energy resolution(keV) | 18 | 20 | 25 | 25 | 35 | 40 |
Leakage current
(20℃, typ/max) | 15/40 nA | 20/40 nA | 30/50 nA | 40/70 nA | 40/70 nA | 70/100 nA |
Bias voltage
(V, min/max) | 20/90 | 20/90 | 20/90 | 20/90 | 20/90 | 20/90 |
Work temp.
(℃, min/max) | -40/+40 | -40/+40 | -40/+40 | -40/+40 | -40/+40 | -40/+40 |
Storage temp.
(℃, max) | 100 | 100 | 100 | 100 | 100 | 100 |
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